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BYT28-300-BYT28-500
Dual rectifier diodes ultrafast
Philips Semiconductors Product specification
Dual rectifier diodes BYT28 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA• Low forward volt drop VR = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.05 V
• High thermal cycling performance
• Low thermal resistance I O(AV) = 10 Arr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)Dual, common cathode, ultra-fast,
PIN DESCRIPTIONepitaxial rectifier diodes intended
for useas output rectifiersin high 1 cathode
frequency switched mode power
supplies. 2 anode
The BYT28 seriesis suppliedin the tab cathode
conventional leaded SOT78
(TO220AB) package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYT28 -300 -400 -500VRRM Repetitive peak reverse voltage - 300 400 500 V Continuous reverse voltage Tmb ≤ 147˚C - 300 400 500 V
IO(AV) Average rectified output current square wave; δ = 0.5; - 10 A
(both diodes conducting)1 Tmb ≤ 115 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 50 A
current per diode. t = 8.3 ms - 55 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-hs Thermal resistance junction to per diode - - 4.5 K/W
heatsink both diodes conducting - - 3.0 K/W
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient3
tab
Philips Semiconductors Product specification
Dual rectifier diodes BYT28 series
ultrafast
ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 5 A; Tj = 150˚C - 0.95 1.05 V
IF = 10 A - 1.30 1.40 V Reverse current VR = VRRM - 2.0 10 μA
VR = VRRM; Tj = 100 ˚C - 10 200 μA Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 50 60 nC
dIF/dt = 20 A/μs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/μs
Irrm Peak reverse recovery current IF = 5 A to VR ≥ 30 V; - 2.0 3.0 A
dIF/dt = 50 A/μs; Tj = 100˚C
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs - 2.5 - V
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square wave where IF(AV) =IF(RMS) x √D.
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).RF 23 456 780
IF(AV) / A
PF / W
Tmb(max) / C
time
timeFF 234 50
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Dual rectifier diodes BYT28 series
ultrafast
Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per
diode.
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.8. Maximum Qs at Tj = 25˚C; per diode.
Fig.9. Transient thermal impedance per diode
Zth = f(tp)
trr / ns
110 100
dIF/dt (A/us)
1000 Qs / nC
1.0 10 100
-dIF/dt (A/us)
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
15
10
0.5 VF / V 1.5
Philips Semiconductors Product specification
Dual rectifier diodes BYT28 series
ultrafast
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Dual rectifier diodes BYT28 series
ultrafast
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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