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BYT261PIV400-BYT261PIV-400-BYT60P-400
FAST RECOVERY RECTIFIER DIODES
BYT60P-400
BYT260PIV-400 / BYT261PIV-400May 2000- Ed:4D
FAST RECOVERY RECTIFIER DIODES
These rectifier devices are suitedfor free-wheeling
functionin converters and motor control circuits.
Packaged in ISOTOP or SOD93, they are
intendedfor usein Switch Mode Power Supplies.
DESCRIPTION VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance=45pF
Inductance<5 nH
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
TM: ISOTOP isaregistered trademark ofSTMicroelectronics.
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400Pulse test:*tp= 380μs,δ <2%tp=5 ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode)x Rth(j-c) (Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES evaluate the conduction losses use the following equation:
P=1.1xIF(AV)+ 0.0045IF2 (RMS)
RECOVERY CHARACTERISTICS (per diode)
TURN-OFF SWITCHING CHARACTERISTICS
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 10203040506070800
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode, for
ISOTOP).0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor (per diode,
for
ISOTOP). 25 50 75 100 125 1500
IF(av)(A)
Fig.3: Average forward current versus ambient
temperature (δ=0.5, per diodefor ISOTOP).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.4-1: Non repetitive surge peak forward current
versus overload duration (SOD93).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (per diode, for ISOTOP).
BYT60P-400 / BYT260PIV-400 / BYT261PIV-4001E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-1: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode
for ISOTOP).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-2: Relative variationof thermal impedance
junctionto case versus pulse duration (SOD93).
0.0 0.5 1.0 1.5 2.0 2.5 3.01
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diodefor ISOTOP). 10 100 20060
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode for
ISOTOP). 20 50 100 200 5000.0
Qrr(μC)
Fig.8: Recovery charges versus dIF/dt (per diode
for ISOTOP). 20 50 100 200 5001
IRM(A)
Fig.9: Recovery current versus dIF/dt (per diode
for ISOTOP).
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 100 200 300 400 5000
VFP(V)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diodefor ISOTOP). 100 200 300 400 5000.00
tfr(μs)
Fig. 11: Forward recovery time versus dIF/dt (per
diodefor ISOTOP). 25 50 75 100 125 1500.25
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Fig. 12: Dynamic parameters versus junction
temperature.
Fig. 13: Turn-off switching characteristics (without
serie inductance).
Fig. 14: Turn-off switching characteristics (with
serie inductance).
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
PACKAGE MECHANICAL DATAISOTOP
