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Partno	Mfg	Dc	Qty	Available	Descript
BYT261PIV1000	ST	N/a	8	avai	FAST RECOVERY RECTIFIER DIODES

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BYT261PIV1000
FAST RECOVERY RECTIFIER DIODES
BYT60P-1000
BYT261PIV-1000
October 1999 - Ed: 4B
FAST RECOVERY RECTIFIER DIODES
Dual or high single voltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.
These devices are packaged in ISOTOP or in
SOD93.
DESCRIPTION
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance = 45 pF
Inductance < 5 nH
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCT CHARACTERISTICS
TM: ISOTOP is a registered trademark of STMicroelectronics.
1/7
Pulse test : * tp = 380 μs, δ < 2%
** tp = 5 ms, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.47 x IF(AV) + 0.005 IF2 (RMS)
RECOVERY CHARACTERISTICS (per diode)
TURN-OFF SWITCHING CHARACTERISTICS
BYT60P-1000 / BYT261PIV-1000
2/7
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig. 2-1: Peak current versus form factor (per
diode, ISOTOP). 25 50 75 100 125 1500
IF(av)(A)
Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP). 102030405060700
PF(av)(W)
Fig. 1-1: Average forward power dissipation
versus average forward current (per diode,
ISOTOP).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig. 2-2: Peak current versus form factor (SOD93). 102030405060700
PF(av)(W)
Fig. 1-2: Average forward power dissipation
versus average forward current (SOD93).
BYT60P-1000 / BYT261PIV-1000
3/7
10 100 2000C(pF)
Fig. 7: Junction capacitance versus reverse voltage
applied (typical values, per diode for ISOTOP).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.01
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode,
ISOTOP).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (SOD93).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (per diode, ISOTOP).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
BYT60P-1000 / BYT261PIV-1000
4/7
100 200 300 400 5000.00tfr(μs)
Fig. 11: Forward recovery time versus dIF/dt (per
diode for ISOTOP). 25 50 75 100 125 1500.25
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Fig. 12: Dynamic parameters versus junction
temperature. 100 200 300 400 5000
VFP(V)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode for ISOTOP). 20 50 100 200 5000
IRM(A)
Fig. 9: Recovery current versus dIF/dt (per diode
for ISOTOP). 20 50 100 200 5000
Qrr(μC)
Fig. 8: Recovery charges versus dIF/dt (per diode
for ISOTOP).
BYT60P-1000 / BYT261PIV-1000
5/7
Fig. 13: Turn-off switching characteristics (without
serie inductance).
Fig. 14: Turn-off switching characteristics (with
serie inductance).
PACKAGE MECHANICAL DATA
ISOTOP
BYT60P-1000 / BYT261PIV-1000
6/7

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