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BYT230Y-400
FAST RECOVERY RECTIFIER DIODES
BYT230Y-400October 1999 - Ed: 3A
FAST RECOVERY RECTIFIER DIODES
Dual 400V rectifiers suited for Switch Mode Power
Supplies and other converters.
Packaged in Max247, this device is also intended
for use in welding equipment and telecom power
supplies.
DESCRIPTIONVERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
PRELIMINARY DATASHHET1/5
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 μs, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.0 x IF(AV) + 0.01 IF2 (RMS)
RECOVERY CHARACTERISTICS
TURN-OFF SWITCHING CHARACTERISTICS (without serie inductance)
TURN-OFF OVERVOLTAGE CORFFICIENT (with serie inductance)
BYT230Y-4002/5
5 10 15 20 25 300
PF(av)(W)
Fig. 1: Average forward power dissipation versusaverage forward current (per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
250
IM(A)
Fig. 2: Peak current versus form factor (per diode).1E-3 1E-2 1E-1 1E+00
250
IM(A)
Fig. 4: Non repetitive surge peak forward current
versus overload duration ( per diode).0
IF(av)(A)
Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0.0 0.5 1.0 1.5 2.0 2.50.1
200.0
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
BYT230Y-4003/5
20 50 100 200 5001
IRM(A)
Fig. 9: Recovery current versus dIF/dt (per diode). 10 100 20010
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode). 20 50 100 200 50010
1000
Qrr(nC)
Fig. 8: Recovery charges versus dIF/dt (per diode). 100 200 300 400 5000
VFP(V)
Fig. 10: Transient peak forward versus dIF/dt (perdiode). 100 200 300 400 5000.00
tfr(μs)
Fig. 11: Forward recovery time versus dIF/dt (per
diode). 25 50 75 100 125 1500.25
1.50
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Fig. 12: Dynamic parameters versus junction
temperature.
BYT230Y-4004/5
:
www.ic-phoenix.com
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