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BYT01-400
FAST RECOVERY RECTIFIER DIODES
BYT01-400October 2001- Ed:2A
HIGH EFFICIENCY ULTRAFAST DIODE
The BYT01-400 whichis using ST’s 400V planar
technology,is specially suited for switching mode
base drive& transistor circuits.
The device, whichis availablein axial (DO-15)
package,is also intended for use asa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Very low conduction losses Negligible switching losses Low forward& reverse recovery times
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
BYT01-400On infinite heatsink with 10mm lead length.
THERMAL PARAMETERS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICSPulse test:*tp= 5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=1.1xIF(AV)+ 0.25IF2 (RMS)
BYT01-400
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
1.2 25 50 75 100 125 150
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5)
110 10 152025
Rth(°C/W)
Fig.3: Thermal resistance versus lead length.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Fig.4: Relative variationof thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads= 10mm).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
IFM(A)
Fig.5: Forwardvoltagedropversus forward current.
10 100 1000
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
BYT01-400
100 1020 3040 5060 7080 90 100
tfr(ns)
Fig.7: Forward recovery time versus dIF/dt (90%
confidence).
15.0 1020304050 60708090 100
VFP(V)
Fig.8. Transient peak forward voltage versus
dIF/dt (90% confidence).
2.5 10 100
IRM(A)
Fig. 9: Peak reverse recovery current versus
dIF/dt (90% confidence).
300 50 75 100 125 150
Fig. 10: Dynamic parameters versus junction
temperature.
10 100 1000
IFSM(A)
Fig. 11: Non repetitive surge peak current versus
numberof cycles.
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