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BYR29-600-BYR29-800
Ultrafast power diode
NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA• Low forward volt drop VR = 500 V/ 600 V/ 700 V /
• Fast switching 800 V
• Soft recovery characteristic
• Reverse surge capability VF ≤ 1.5 V
• High thermal cycling performance
• Low thermal resistance IF(AV) = 8 A
trr ≤ 75 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes
PIN DESCRIPTIONintendedfor useas output rectifiers high frequency switched mode 1 cathode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
MIN. MAX. UNIT
BYR29 -500 -600 -700 -800 - 500 600 700 800 V - 500 600 700 800 V - 500 600 700 800 V - 8 A - 16 A - 60 A - 66 A -40 150 ˚C - 150 ˚C
MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W a
tab
NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
ELECTRICAL CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 1.07 1.50 V
IF = 20 A - 1.75 1.95 V Reverse current VR = VRRM - 1.0 10 μA
VR = VRRM; Tj = 100 ˚C - 0.1 0.2 mA Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 150 200 nC
dIF/dt = 20 A/μs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 60 75 ns
dIF/dt = 100 A/μs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - - 6 A
dIF/dt = 50 A/μs; Tj = 100 ˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/μs - 5.0 -
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).s 100%10%
timeRFrrmrr 4680
BYR29
PF / W Tmb(max) / C
Vo = 1.26 V
Rs = 0.03 Ohms
timeFF 123 45 67 80
IF(AV) / A
120
NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
Fig.5. Maximum trr at Tj = 25˚C and 100˚C.
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
trr / ns
110 100
dIF/dt (A/us)
IF=10 A
Tj = 25 C
Tj = 100 C 0.5 1 1.5 2 2.5 30 BYR29
VF / V
IF / A
maxtyp
Tj = 25 C
Tj = 150 C
Irrm / A 10 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100 C
1000 Qs / nC
IF = 10A 10us 100us 1ms 10ms 100ms 1s 10s
BYV29pulse width, tp (s)
D = tp
NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
MECHANICAL DATADimensions in mm
Net Mass: 2 g
NXP Semiconductors
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DATA SHEET STATUS
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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