BYQ30E-200 ,Rectifier diodes ultrafast, rugged
BYQ30E-200 ,Rectifier diodes ultrafast, ruggedLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
BYQ30E-200 ,Rectifier diodes ultrafast, ruggedGENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifie ..
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BYQ30E-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA• Low forward volt drop VR = 150 V/ 200 V
• Fast switching • Soft recovery characteristic VF ≤ 0.95 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 16 A• Low thermal resistance
IRRM = 0.2 Arr ≤ 25 ns
GENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intendedfor useas output rectifiersin high frequency switched mode power
supplies.
The BYQ30E seriesis suppliedin the SOT78 conventional leaded package.
The BYQ30EB seriesis suppliedin the SOT404 surface mounting package.
The BYQ30ED seriesis suppliedin the SOT428 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION anode 1 cathode 1 anode 2
tab cathode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ30E/ BYQ30EB/ BYQ30ED -150 -200VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage Continuous reverse voltage - 150 200 V
IO(AV) Average rectified output square wave; δ = 0.5; Tmb ≤ 104 ˚C - 16 A
current (both diodes
conducting)
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 104 ˚C - 16 A
current per diode
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current per diode t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 μs; δ = 0.001 - 0.2 A
surge current per diode
IRSM Peak non-repetitive reverse tp = 100 μs - 0.2 A
surge current per diode Operating junction - 150 ˚C
temperature
tab3
tab
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction per diode - - 3 K/W
to mounting base both diodes - - 2.5 K/W
Rth j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICSAll characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITF Forward voltage IF = 8 A; Tj = 150˚C - 0.84 0.95 V
IF = 16 A; Tj = 150˚C - 1 1.15 V
IF = 16 A - 1.12 1.25 VIR Reverse current VR = V RWM -4 30 μA
VR = VRWM; Tj = 100˚C - 0.3 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- 4 11 nCtrr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF /dt = 100 A/μs20 25 ns
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 12 22 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.4. Circuit schematic for trr2
Fig.5. Definition of trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = formRF
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
time
timeFFR
0.5A
02468 10 120
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) / C
150 23 4 5 6 7 8
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) 0.5 1 1.5 20
Forward voltage, VF (V)
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONSDimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes1. Epoxy meets UL94 V0 at 1/8".
4.5 max
10.3 max
3.8
