BYQ28E-200 ,DiodesLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BYQ28E-200
Dual ultrafast power diode
Product profile1.1 General descriptionUltrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information[1] It is not possible to connect to pin 2 of the SOT428 package.
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007 Product data sheet Fast switching n Low thermal resistance Soft recovery characteristic n Low forward voltage drop Reverse surge capability n High thermal cycling performance Output rectifiers in high-frequency switched-mode power supplies VRRM≤ 200V n IO(AV)≤10A VF≤ 0.895V n trr=10 ns (typ)
Table 1. Pinning anode 1
SOT78 (3-lead TO-220AB)
SOT428 (DPAK) cathode [1] anode 2 mounting base; cathode
sym0841
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged Ordering information Limiting values
Table 2. Ordering informationBYQ28E-200 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BYQ28ED-200 DPAK plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
SOT428
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 200 V
VRWM crest working reverse voltage - 200 V reverse voltage square waveform;δ= 1.0 - 200 V
IO(AV) average output current square waveform;δ= 0.5;
Tmb≤ 119 °C; both diodes conducting
-10 A
IFRM repetitive peak forward current tp =25 μs; square waveform;δ= 0.5;
Tmb≤ 119 °C; per diode
-10 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform; per
diode
-50 A= 8.3 ms; sinusoidal waveform; per
diode
-55 A
IRM peak reverse recovery current tp =2 μs;δ= 0.001 - 0.2 A
IRSM non-repetitive peak reverse
current= 100μs - 0.2 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
Electrostatic dischargeVESD electrostatic discharge voltage all pins; human body model;= 250 pF; R= 1.5kΩ kV
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged Thermal characteristics[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
with heatsink compound;
per diode; see Figure1 - 4.5 K/W
with heatsink compound;
both diodes conducting
--3 K/W
Rth(j-a) thermal resistance from junction to ambient in free air; SOT78 - 60 - K/W
SOT428 [1]- 50 - K/W
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged Characteristics
Table 5. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=5 A; Tj= 150 °C; see Figure2 - 0.8 0.895 V=5 A; see Figure2 - 0.95 1.1 V=10 A; see Figure2 - 1.1 1.25 V reverse current VR= 200V - 2 10 μA= 200 V; Tj= 100°C - 0.1 0.2 mA
Dynamic characteristics recovered charge IF =2AtoVR≥30V; dIF/dt=20A/μs;
see Figure3 49nC
trr reverse recovery time ramp recovery; IF=1 A to VR≥30V;
dIF/dt= 100 A/μs; see Figure3 1525ns
step recovery; when switched from= 0.5 A to IR=1 A; measured at= 0.25A 1020ns
IRM peak reverse recovery
current =5AtoVR≥30V; dIF/dt=50A/μs;
see Figure3 0.5 0.7 A
VFR forward recovery
voltage=1 A; dIF/dt=10 A/μs; see Figure4 -1 -V
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged Package outline
Fig 7. Package outline SOT78 (TO-220AB)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
