BYG10M ,DiodesElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Sym ..
BYG10Y ,DiodesRev. 1.5, 09-Oct-00 1BYG10VISHAYVishay SemiconductorsMaximum Thermal ResistanceT = 25 °C, unless ot ..
BYG20D ,Discrete Devices -Diode-High Efficienct Recovery Document Number 860092 Rev. 5, 07-Jan-03I – Forward Current ( A)FI – Average Forward Curre ..
BYG20G ,Discrete Devices -Diode-High Efficienct RecoveryRev. 5, 07-Jan-03 3C – Diode Capacitance ( pF ) P – Reverse Power Dissipation ( mW ) I – Reve ..
BYG20G ,Discrete Devices -Diode-High Efficienct RecoveryAbsolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BYG20J ,Discrete Devices -Diode-High Efficienct RecoveryElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Sym ..
C3866 , COMPACT BENCH-TOP TYPE
C3866 , COMPACT BENCH-TOP TYPE
C3901 , Current output, high UV sensitivity, excellent linearity, low power consumption
C3901 , Current output, high UV sensitivity, excellent linearity, low power consumption
C3D04060F , Z-RecTM Rectifiers and Zero-Recovery® Rectifiers
C3D06060A , Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier
BYG10D-BYG10G-BYG10J-BYG10K-BYG10M-BYG10Y
Diodes
BYG10Document Number 86008
Vishay Semiconductorswww.vishay.com
Standard Avalanche Sinterglass Diode
Features Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable
ApplicationsSurface mounting
General purpose rectifier
Parts Table
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
