Home ›  B › B36 > BYC8X-600-BYC8X-600.-BYC8X-600..,Hyperfast power diode

BYC8X-600-BYC8X-600.-BYC8X-600.. Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BYC8X-600 |BYC8X600	PH	N/a	100	avai	Hyperfast power diode
BYC8X-600. |BYC8X600	NXP	N/a	100	avai	Hyperfast power diode
BYC8X-600.. |BYC8X600	NXP	N/a	100	avai	Hyperfast power diode

BYC8X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8X-600. ,Hyperfast power diodeApplications„ Continuous Current Mode (CCM) „ Half-bridge/full-bridge switched-mode Power Factor Co ..
BYC8X-600.. ,Hyperfast power diodeBYC8X-600Hyperfast rectifier diode, low switching lossRev. 02 — 13 March 2009 Product data sheet1. ..
BYD17D ,General purpose controlled avalanche rectifiers
BYD17D ,General purpose controlled avalanche rectifiers
BYD17D ,General purpose controlled avalanche rectifiers
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT

---

BYC8X-600-BYC8X-600.-BYC8X-600..
Hyperfast power diode
BYC8X-600
Hyperfast rectifier diode, low switching loss
Rev. 02 — 13 March 2009 Product data sheet Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits Low reverse recovery current and low
thermal resistance Reduces switching losses in
associated MOSFET
1.3 Applications Continuous Current Mode (CCM)
Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode
power supplies Half-bridge lighting ballasts
1.4 Quick reference data Table 1. Quick reference
VRRM repetitive peak
reverse voltage - 600 V
IF(AV) average forward
current
square-wave pulse; δ= 0.5; =59°C; see Figure 1;
see Figure 2
--8 A
Dynamic characteristics
trr reverse recovery
time =8A; VR =400V;
dIF/dt= 500 A/µs; =25 °C; see Figure 5
-19 - ns
Static characteristics forward voltage IF =8A; Tj =150 °C; see
Figure 4 1.4 1.85 V
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Pinning information Ordering information Limiting values
Table 2. Pinning information K cathode
SOD113
(TO-220F) A anode n.c. mounting base; isolated1
Table 3. Ordering information
BYC8X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage
-600 V
VRWM crest working reverse
voltage
-600 V
IF(AV) average forward
current
square-wave pulse; δ =0.5; Th=59 °C; see Figure
1; see Figure 2 A
IFRM repetitive peak forward
current
square-wave pulse; δ= 0.5; tp=25 µs; Th =59°C - 16 A
IFSM non-repetitive peak
forward current=10 ms; sine-wave pulse; Tj(init) =25°C - 80 A= 8.3 ms; sine-wave pulse; Tj(init) =25°C - 88 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Thermal characteristics
Table 5. Thermal characteristics
Rth(j-h) thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3 --4.8 K/W
Rth(j-a) thermal resistance from
junction to ambient free
air
-55 - K/W
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Isolation characteristics Characteristics
Table 6. Isolation characteristics
Visol(RMS) RMS isolation voltage f=1 MHz; RH=65 %; between all pins
and external heatsink
--2500 V
Cisol isolation capacitance from cathode to external heatsink - 10 - pF
Table 7. Characteristics
Static characteristics forward voltage IF =8A; Tj= 150 °C; see Figure 4 - 1.4 1.85 V =8A; Tj =25°C - 2 2.9 V =16A; Tj= 150°C - 1.7 2.3 V reverse current VR =500 V; Tj= 100°C - 1.1 3 mA= 600V - 9 150 µA
Dynamic characteristics recovered charge IF =1A; dIF/dt= 100 A/µs - 12 - nC
trr reverse recovery time IF =8A; VR= 400 V; dIF/dt= 500 A/µs; = 100°C
-32 40 ns =1A; VR =30 V; dIF/dt=50 A/µs; =25°C
-30 52 ns =8A; VR= 400 V; dIF/dt= 500 A/µs; =25°C; see Figure 5
-19 - ns
IRM peak reverse recovery
current =10A; VR= 400 V; dIF/dt= 500 A/µs; = 100°C
-9.5 12 A =8A; VR= 400 V; dIF/dt=50 A/µs; = 125°C
-1.5 5.5 A
VFR forward recovery
voltage =10A; dIF/dt= 100 A/µs; Tj =25°C;
see Figure 6 10 V
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss
NXP Semiconductors BYC8X-600
Hyperfast rectifier diode, low switching loss Package outline

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED