BYC8-600 ,Rectifier diode ultrafast, low switching lossLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8B-600 ,Hyperfast power diode
BYC8B-600 ,Hyperfast power diode
BYC8B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8X-600. ,Hyperfast power diodeApplications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Co ..
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
BYC8-600
Rectifier diode ultrafast, low switching loss
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA Extremely fast switching V R = 600 V Low reverse recovery current Low thermal resistance VF ≤ 1.85 V
Reduces switching losses in
associated MOSFET IF(AV) = 8 A
trr = 19 ns (typ)
APPLICATIONS PINNING SOD59 (TO220AC) Active power factor correction
PIN DESCRIPTION Half-bridge lighting ballasts
Half-bridge/ full-bridge switched 1 cathode
mode power supplies. anode
The BYC8-600 is supplied in the
SOD59 (TO220AC) conventional tab cathode
leaded package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM Peak repetitive reverse voltage - 600 V
VRWM Crest working reverse voltage - 600 V Continuous reverse voltage Tmb ≤ 110 ˚C - 500 V
IF(AV) Average forward current δ = 0.5; with reapplied VRRM(max);- 8 A
Tmb ≤ 82 ˚C
IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 16 A
Tmb ≤ 82 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 55 A
current. t = 8.3 ms - 60 A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to - - 2.2 K/W
mounting base
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient
tab
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 1.4 1.85 V
IF = 16 A; Tj = 150˚C - 1.7 2.3 V
IF = 8 A; - 2.0 2.9 V Reverse current VR = 600 V - 9 150 μA
VR = 500 V; Tj = 100 ˚C - 1.1 3.0 mA
trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 52 ns
trr Reverse recovery time IF = 8 A; VR = 400 V; - 19 - nsdIF /dt = 500 A/μs
trr Reverse recovery time IF = 8 A; VR = 400 V; - 32 40 ns
dIF/dt = 500 A/μs; Tj = 100˚C
Irrm Peak reverse recovery current IF = 8 A; VR = 400 V; - 1.5 5.5 A
dIF/dt = 50 A/μs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 8 A; VR = 400 V; - 9.5 12 A
dIF/dt = 500 A/μs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs- 8 10 V
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
Vin Vo = 400 V d.c.
500 V MOSFET
150 uH
OUTPUT DIODEtyp
Vin Vin = 400 V d.c.IR
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
Fig.5. Typical switching losses in transistor due to
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt.
Fig.8. Typical peak reverse recovery current, Irrm as a
02468 10 120
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
100 1000
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
100 100010
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
100 1000
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
100 10001
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters trr, Irrm
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
Fig.11. Definition of forward recovery voltage Vfr
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
Fig.14. Maximum thermal impedance Zth j-mb as a
function of pulse width.RF
012 340
Forward voltage, VF (V)
Forward current, IF (A) 50 100 150 2000
Rate of change of current, dIF/dt (A/ s) 100 200 300 400 500 600
1uA
10uA
100uA
1mA
10mA
100mA
Reverse voltage (V)
time
timeFF
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,0
3,0 max
not tinned
2,4
0,6
4,5
max
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
Philips Semiconductors Product specification
Rectifier diode BYC8-600
ultrafast, low switching loss
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
