BYC5B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC5B-600 ,Hyperfast power diode
BYC5X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8-600 ,Rectifier diode ultrafast, low switching lossLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8B-600 ,Hyperfast power diode
BYC8B-600 ,Hyperfast power diode
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
BYC5B-600
Hyperfast power diode
��� Semiconductors Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA• Extremely fast switching VR = 600 V
• Low reverse recovery current
• Low thermal resistance VF ≤ 1.75 V
• Reduces switching losses in
associated MOSFET IF(AV) = 5 A
trr = 19 ns (typ)
APPLICATIONS PINNING SOT404• Active power factor correction
PIN DESCRIPTION• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 no connection
mode power supplies. cathode1
The BYC5B-600 is supplied in the
SOT404 surface mounting 3 anode
package.
tab cathode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM Peak repetitive reverse voltage - 600 V
VRWM Crest working reverse voltage - 600 VR Continuous reverse voltage Tmb ≤ 110 ˚C - 500 V
IF(AV) Average forward current δ = 0.5; with reapplied VRRM(max);- 5 A
Tmb ≤ 89 ˚C
IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 10 A
Tmb ≤ 89 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 40 A
current. t = 8.3 ms - 44 A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to - - 2.5 K/W
mounting base
Rth j-a Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W
ambient a
tab 3
tab
1 it is not possible to make connection to pin 2 of the SOT404 package
��� Semiconductors Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V
IF = 10 A; Tj = 150˚C - 1.75 2.2 V
IF = 5 A; - 2.0 2.9 V Reverse current VR = 600 V - 9 100 μA
VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA
trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 50 ns
trr Reverse recovery time IF = 5 A; VR = 400 V; - 19 - ns
dIF/dt = 500 A/μs
trr Reverse recovery time IF = 5 A; VR = 400 V; - 25 30 ns
dIF/dt = 500 A/μs; Tj = 100˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A
dIF/dt = 50 A/μs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A
dIF/dt = 500 A/μs; Tj = 125˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs- 9 11 V
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
Vin Vo = 400 V d.c.
500 V MOSFET
150 uH
OUTPUT DIODEtyp
Vin Vin = 400 V d.c.
inductive loadIR
��� Semiconductors Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt. 2345 6780
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
time Irrm
dIF/dt
ID = IL
losses due to
diode reverse recovery
100 10000
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
100 100010
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W) 10001
100
��� Semiconductors Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters trr, Irrm
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
Fig.11. Definition of forward recovery voltage Vfr
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
Fig.14. Maximum thermal impedance Z th j-mb as a
function of pulse width.s 100%10%
timeRFrrmrr
012 34
Forward voltage, VF (V) 50 100 150 2000
Rate of change of current, dIF/dt (A/ s) 100 200 300 400 500 6001uA
10uA
100uA
1mA
10mA
100mA
Reverse voltage (V)
Reverse leakage current (A)
time
timeFfrFF
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
��� Semiconductors �Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
MECHANICAL DATADimensions in mm
Net Mass: 1.4 g
Fig.15. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONSDimensions in mm
Fig.16. SOT404 : soldering pattern for surface mounting.
Notes1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.85 max
(x2)
2.0
