BYC58X-600 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B36 > BYC58X-600,Casco diode

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BYC58X-600 \|BYC58X600	NXP	N/a	68	avai	Casco diode

BYC58X-600 ,Casco diodeApplications Continuous Current Mode (CCM) Power supply adaptersPower Factor Correction (PFC) S ..
BYC5B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC5B-600 ,Hyperfast power diode
BYC5X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC8-600 ,Rectifier diode ultrafast, low switching lossLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC8B-600 ,Hyperfast power diode
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT

BYC58X-600
Casco diode
BYC58X-600
8 A hyperfast rectifier diode
Rev. 01 — 23 February 2010 Product data sheet Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package
specifically for use in CCM PFC applications for reduced switching losses.
1.2 Features and benefits Allows use of smaller MOSFETs and
heatsinks Isolated package Low reverse recovery current Low thermal resistance Reduces switching losses in
associated MOSFET Superfast switching
1.3 Applications Continuous Current Mode (CCM)
Power Factor Correction (PFC) Desk top computer power supplies Flat panel TV power supplies Power supply adapters Server power supplies Telecom power supplies
1.4 Quick reference data Table 1. Quick reference
VRRM repetitive peak
reverse voltage - 600 V
IF(AV) average forward
current
square-wave pulse; δ= 0.5; ≤93 °C; see Figure 1 and 2
--8 A
IFSM non-repetitive peak
forward current
Tj(init) =25°C; tp=10 ms;
sine-wave pulse
--110 A
Tj(init) =25°C; tp =8.3 ms;
sine-wave pulse - 120 A
Rth(j-h) thermal resistance
from junction to
heatsink
with heatsink compound;
see Figure 3
-2.5 3 K/W
NXP Semiconductors BYC58X-600
8 A hyperfast rectifier diode Pinning information Ordering information
Dynamic characteristics
trr reverse recovery
time =8A; VR =400V;
dIF/dt= 200 A/µs; Tj =25 °C;
see Figure 6 12.5 - ns =8A; VR =400V;
dIF/dt= 200 A/µs; Tj= 125 °C;
see Figure 6 and 7
-21 - ns recovered charge IF =8A; VR =400V;
dIF/dt= 200 A/µs; Tj= 125 °C;
see Figure 5 and 6
-40 - nC
Static characteristics forward voltage IF =8A; Tj =25°C;
see Figure 4 2.35 3.2 V =8A; Tj =150 °C;
see Figure 4 2.4 V
Table 1. Quick reference …continued
Table 2. Pinning information K cathode
SOD113 (TO-220F) A anode n.c. mounting base; isolated
Table 3. Ordering information
BYC58X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
SOD113
NXP Semiconductors BYC58X-600
8 A hyperfast rectifier diode Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage
-600 V
VRWM crest working reverse
voltage
-600 V
IF(AV) average forward
current
square-wave pulse; δ= 0.5; Th≤93 °C; see Figure 1
and 2 A
IFRM repetitive peak forward
current
square-wave pulse; δ= 0.5; tp =25µs - 16 A
IFSM non-repetitive peak
forward current=10 ms; sine-wave pulse; Tj(init) =25°C - 110 A= 8.3 ms; sine-wave pulse; Tj(init) =25°C - 120 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYC58X-600
8 A hyperfast rectifier diode Thermal characteristics Isolation characteristics
Table 5. Thermal characteristics
Rth(j-h) thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3 - 2.5 3 K/W
Rth(j-a) thermal resistance from
junction to ambient free air
in free air - 55 - K/W
Table 6. Isolation characteristics
Visol(RMS) RMS isolation voltage 50Hz≤f≤60 Hz; RH≤65 %; from all pins to
external heatsink; sinusoidal waveform; clean
and dust free - 2500 V
Cisol isolation capacitance f = 1 MHz; from cathode to external heatsink - 10 - pF
NXP Semiconductors BYC58X-600
8 A hyperfast rectifier diode Characteristics
Table 7. Characteristics
Static characteristics forward voltage IF =8A; Tj=25 °C; see Figure 4 - 2.35 3.2 V =8A; Tj= 150 °C; see Figure 4 -2 2.4 V reverse current VR =600 V; Tj=25°C - - 150 µA
Dynamic characteristics recovered charge IF =8A; VR= 400 V; dIF/dt= 200 A/µs; = 125 °C; see Figure 5 and 6
-40 - nC
trr reverse recovery time IF =8A; VR= 400 V; dIF/dt= 200 A/µs; =25°C; see Figure 6 12.5 - ns =8A; VR= 400 V; dIF/dt= 200 A/µs; = 125 °C; see Figure 6 and 7
-21 - ns
IRM peak reverse recovery
current =8A; VR= 400 V; dIF/dt= 200 A/µs; = 125°C 5.5 A
NXP Semiconductors BYC58X-600
8 A hyperfast rectifier diode

TEL:86-533-2716050 FAX:86-533-2716790