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Partno	Mfg	Dc	Qty	Available	Descript
BYC20-600 |BYC20600	NXP	N/a	21	avai	Hyperfast power diode

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BYC20-600
Hyperfast power diode
Product profile1.1 General description
Hyperfast, epitaxial rectifier diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYC20-600
Rectifier diode, hyperfast
Rev. 01 — 28 November 2007 Product data sheet Extremely fast switching n Low thermal resistance Reduces switching loss in associated
MOSFET Low reverse recovery current Half-bridgeor full-bridge switched-mode
power supplies Continuous Current Mode (CCM) Power
Factor Correction (PFC) Half-bridge lighting ballasts VRRM≤ 600V n IF(AV)≤20A VF= 1.54 V (typ) n trr=19 ns (typ)
Table 1. Pinning cathode (k)
SOD59 (2-lead TO-220AC) anode (a) mounting base; cathode
001aaa020
NXP Semiconductors BYC20-600
Rectifier diode, hyperfast Ordering information Limiting values
Table 2. Ordering information
BYC20-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead
TO-220AC
SOD59
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Tmb≤ 100°C - 500 V
IF(AV) average forward current square waveform;δ= 0.5; Tmb≤93°C - 20 A
IFRM repetitive peak forward current square waveform;δ= 0.5; Tmb≤93 °C; =25 μs;
-40 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 250 A= 8.3 ms; sinusoidal waveform - 274 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYC20-600
Rectifier diode, hyperfast Thermal characteristics
Table 4. Thermal characteristics
Rth(j-mb) thermal resistance from junctionto mounting base with heatsink compound;
see Figure1 - 1.2 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
NXP Semiconductors BYC20-600
Rectifier diode, hyperfast Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=20 A; Tj= 150 °C; see Figure2 - 1.54 1.97 V=40 A; Tj= 150 °C; see Figure2 - 1.95 2.34 V=20 A; see Figure2 - 1.89 2.9 V reverse current VR= 600V - 16 200 μA= 500 V; Tj= 100°C - 1.6 3.0 mA
Dynamic characteristics
trr reverse recovery time IF =1AtoVR =30V; dIF/dt=50A/μs;
see Figure3 3555ns=20 A to VR= 400V;
dIF/dt= 500 A/μs; see Figure3 =25°C - 19 - ns= 100°C - 32 40 ns
IRM peak reverse recovery
current=20 A to VR= 400 V; Tj= 125 °C;
see Figure3
dIF/dt=50A/μs - 3.0 7.5 A
dIF/dt= 500 A/μs - 9.5 12 A
VFR forward recovery
voltage=20 A; dIF/dt= 100 A/μs;
see Figure4 8 11 V
NXP Semiconductors BYC20-600
Rectifier diode, hyperfast
NXP Semiconductors BYC20-600
Rectifier diode, hyperfast

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