BYC15X-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC20-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC5-600 ,Rectifier diode ultrafast, low switching lossLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC58X-600 ,Casco diodeApplications Continuous Current Mode (CCM) Power supply adaptersPower Factor Correction (PFC) S ..
BYC5B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC5B-600 ,Hyperfast power diode
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
BYC15X-600
Hyperfast power diode
Product profile1.1 General descriptionHyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYC15X-600
Rectifier diode, hyperfast
Rev. 01 — 29 November 2007 Product data sheet Extremely fast switching n Low thermal resistance Low reverse recovery current n Isolated package Reduces switching loss in associated
MOSFET Half-bridgeor full-bridge switched-mode
power supplies Continuous Current Mode (CCM) Power
Factor Correction (PFC) Half-bridge lighting ballasts VRRM≤ 600V n IF(AV)≤15A VF= 1.32 V (typ) n trr=19 ns (typ)
Table 1. Pinning cathode (k)
SOD113 (2-lead TO-220F) anode (a) mounting base; isolated1 a
001aaa020
NXP Semiconductors BYC15X-600
Rectifier diode, hyperfast Ordering information Limiting values
Table 2. Ordering informationBYC15X-600 TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
2-lead TO-220 ‘full pack’
SOD113
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Th≤ 100°C - 500 V
IF(AV) average forward current square waveform;δ= 0.5; Th≤25°C - 15 A
IFRM repetitive peak forward current square waveform;δ= 0.5; Th≤25 °C; =25μs
-30 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 200 A= 8.3 ms; sinusoidal waveform - 220 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYC15X-600
Rectifier diode, hyperfast Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-h) thermal resistance from junction to heatsink with heatsink compound;
see Figure1 - 3.6 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;=50 Hz to 60 Hz; sinusoidal waveform;
relative humidity≤65 %; clean and dust free - 2500 V
Cisol isolation capacitance from pin 1 (cathode) to external heatsink;
f=1MHz
-10 - pF
NXP Semiconductors BYC15X-600
Rectifier diode, hyperfast Characteristics
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=15 A; Tj= 150 °C; see Figure2 - 1.32 2.03 V=30 A; Tj= 150 °C; see Figure2 - 1.64 2.34 V=15 A; see Figure2 - 1.89 2.9 V reverse current VR= 600V - 12 200 μA= 500 V; Tj= 100°C - 1.1 3.0 mA
Dynamic characteristicstrr reverse recovery time IF=1 A to VR =30V; dIF/dt= 50 A/μs;
see Figure3
-35 55 ns=15 A to VR= 400 V; dIF/dt= 500 A/μs;
see Figure3 =25°C - 19 - ns= 100°C - 32 40 ns
IRM peak reverse recovery
current=15 A to VR= 400 V; Tj= 125 °C;
see Figure3
dIF/dt=50 A/μs - 3.0 7.5 A
dIF/dt= 500 A/μs - 9.5 12 A
VFR forward recovery
voltage=15 A; dIF/dt= 100 A/μs; see Figure4 - 8 11 V
NXP Semiconductors BYC15X-600
Rectifier diode, hyperfast
NXP Semiconductors BYC15X-600
Rectifier diode, hyperfast
