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Partno	Mfg	Dc	Qty	Available	Descript
BYC15-600 |BYC15600	NXP	N/a	70	avai	Hyperfast power diode

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BYC15-600
Hyperfast power diode
Product profile1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
1.2 Features and benefits Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching loss in associated
MOSFET
1.3 Applications Continuous Current Mode (CCM)
Power Half-bridge lighting ballasts Half-bridge or full-bridge
switched-mode
1.4 Quick reference data
BYC15-600
Hyperfast power diode
Rev. 02 — 29 July 2010 Product data sheet
Table 1. Quick reference data
Specify Name
VRRM repetitive peak reverse
voltage
--600 V
IF(AV) average forward current square-wave pulse; δ =0.5 ; Tmb≤98 °C;
see Figure 1; see Figure 2
--15 A
Static characteristics forward voltage IF =15A; Tj =150 °C;
see Figure 3
-1.4 2 V
Dynamic characteristics
trr reverse recovery time IF =15A; VR =400V; dIF/dt= 500 A/µs; Tj =25°C;
see Figure 4
-19 - ns
NXP Semiconductors BYC15-600
Hyperfast power diode Pinning information Ordering information Limiting values
Table 2. Pinning information K cathode
SOD59 (TO-220AC) A anode mb mounting base; cathode
Table 3. Ordering information
BYC15-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Specify Name
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage Tmb≤ 100 °C; DC - 500 V
IF(AV) average forward current square-wave pulse; δ= 0.5 ; Tmb≤98 °C;
see Figure 1; see Figure 2
-15 A
IFRM repetitive peak forward current square-wave pulse; δ= 0.5; tp=25 µs;
Tmb≤98°C
-30 A
IFSM non-repetitive peak forward
current=10 ms; sine-wave pulse; Tj(init)=25°C - 200 A= 8.3 ms; sine-wave pulse; Tj(init)=25°C - 220 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYC15-600
Hyperfast power diode
NXP Semiconductors BYC15-600
Hyperfast power diode Thermal characteristicsTable 5. Thermal characteristics
Specify Name
Rth(j-mb) thermal resistance from junction
to mounting base
with heatsink compound - - 1.5 K/W
Rth(j-a) thermal resistance from junction
to ambient
in free air - 60 - K/W
NXP Semiconductors BYC15-600
Hyperfast power diode Characteristics
Table 6. Characteristics
Static characteristics forward voltage IF =30 A; Tj= 150 °C; see Figure 3 -1.7 2.3 V =15 A; Tj =25°C; see Figure 3 -1.9 2.9 V =15 A; Tj= 150 °C; see Figure 3 -1.4 2 V reverse current VR =500 V; Tj =100°C - 1.1 3 mA =600 V; Tj=25°C - 12 200 µA
Dynamic characteristics
trr reverse recovery time IF =15 A; VR= 400 V; dIF/dt= 500 A/µs; =100 °C; see Figure 4 3240ns =1A; VR =30 V; dIF/dt=50 A/µs; =25 °C; see Figure 4 3555ns =15 A; VR= 400 V; dIF/dt= 500 A/µs; =25 °C; see Figure 4
-19 - ns
IRM peak reverse recovery
current =15 A; VR= 400 V; dIF/dt= 500 A/µs; =125 °C; see Figure 4
-9.5 12 A =15 A; VR= 400 V; dIF/dt=50 A/µs; =125 °C; see Figure 4 7.5 A
VFR forward recovery voltage IF =15 A; dIF/dt= 100 A/µs; Tj =25°C;
see Figure 5 11 V
NXP Semiconductors BYC15-600
Hyperfast power diode

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