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Partno	Mfg	Dc	Qty	Available	Descript
BYC10X-600 |BYC10X600	PHILIPS	N/a	49	avai	Hyperfast power diode

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BYC10X-600
Hyperfast power diode
Product profile1.1 General description
Hyperfast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYC10X-600
Rectifier diode, hyperfast
Rev. 02 — 16 January 2008 Product data sheet Extremely fast switching n Low thermal resistance Low reverse recovery current n Isolated package Reduces switching loss in associated
MOSFET Half-bridgeor full-bridge switched-mode
power supplies Continuous Current Mode (CCM) Power
Factor Correction (PFC) Half-bridge lighting ballasts VRRM≤ 600V n IF(AV)≤10A VF= 1.32 V (typ) n trr=19 ns (typ)
Table 1. Pinning cathode (k)
SOD113 (2-lead TO-220F) anode (a) mounting base; isolated1 a
001aaa020
NXP Semiconductors BYC10X-600
Rectifier diode, hyperfast Ordering information Limiting values
Table 2. Ordering information
BYC10X-600 TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
2-lead TO-220 ‘full pack’
SOD113
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Th≤ 100°C - 500 V
IF(AV) average forward current square waveform;δ= 0.5; Th≤37°C - 10 A
IFRM repetitive peak forward current square waveform;δ= 0.5; Th≤37°C - 20 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 91 A= 8.3 ms; sinusoidal waveform - 100 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYC10X-600
Rectifier diode, hyperfast Thermal characteristics Isolation characteristics
Table 4. Thermal characteristics
Rth(j-h) thermal resistance from junction to heatsink with heatsink compound;
see Figure1 - 4.8 K/W
without heatsink compound - - 5.9 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
Table 5. Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;=50 Hz to 60 Hz; sinusoidal waveform;
relative humidity≤65 %; clean and dust free - 2500 V
Cisol isolation capacitance from cathode to external heatsink; f=1 MHz - 10 - pF
NXP Semiconductors BYC10X-600
Rectifier diode, hyperfast Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=10 A; Tj= 150 °C; see Figure2 - 1.32 2.03 V=20 A; Tj= 150 °C; see Figure2 - 1.64 2.34 V=10 A; see Figure2 - 1.89 2.9 V reverse current VR= 600V - 9 200 μA= 500 V; Tj= 100°C - 1.1 3.0 mA
Dynamic characteristics
trr reverse recovery time IF =1AtoVR =30V; dIF/dt=50A/μs;
see Figure3 3555ns=10 A to VR= 400V;
dIF/dt= 500 A/μs; see Figure3
-19 - ns=10 A to VR= 400V;
dIF/dt= 500 A/μs; Tj= 100 °C;
see Figure3 3240ns
IRM peak reverse recovery
current=10 A to VR= 400V;
dIF/dt=50A/μs; Tj= 125 °C;
see Figure3 3.0 7.5 A=10 A to VR= 400V;
dIF/dt= 500 A/μs; Tj= 100 °C;
see Figure3 9.5 12 A
VFR forward recovery
voltage=10 A; dIF/dt= 100 A/μs;
see Figure4 8 11 V
NXP Semiconductors BYC10X-600
Rectifier diode, hyperfast
NXP Semiconductors BYC10X-600
Rectifier diode, hyperfast

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