BYC10-600CT ,Dual hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10-600CT ,Dual hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10B-600 ,Hyperfast power diode
BYC10B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10X-600 ,Hyperfast power diodeThermal characteristicsSymbol Parameter Conditions Min Typ Max UnitR thermal resistance from juncti ..
BYC15-600 ,Hyperfast power diodeApplications Continuous Current Mode (CCM) Half-bridge or full-bridge Power switched-mode Half- ..
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
BYC10-600CT
Dual hyperfast power diode
NXP Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA• Dual diode VR = 600 V
• Extremely fast switching
• Low reverse recovery current VF ≤ 1.75 V
• Low thermal resistance
• Reduces switching losses in IO(AV) = 10 A
associated MOSFET
trr = 19 ns (typ)
APPLICATIONS PINNING SOT78 (TO220AB)• Active power factor correction
PIN DESCRIPTION• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 anode 1
mode power supplies. cathode
The BYC10-600CT is supplied in
the SOT78 (TO220AB) 3 anode 2
conventional leaded package.
tab cathode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM Peak repetitive reverse voltage - 600 V
VRWM Crest working reverse voltage - 600 VR Continuous reverse voltage Tmb ≤ 110 ˚C - 500 V
IO(AV) Average output current (both δ = 0.5; with reapplied VRRM(max); - 10 A
diodes conducting) Tmb ≤ 50 ˚C1
IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 10 A
per diode Tmb ≤ 50 ˚C1
IFSM Non-repetitive peak forward t = 10 ms - 40 A
current per diode t = 8.3 ms - 44 A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to per diode - - 2.5 K/W
mounting base both diodes - - 2.2 K/W
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient a23
tab
1 Tmb(max) limited by thermal runaway
��� Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICSTj = 25 ˚C, per diode unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V
IF = 10 A; Tj = 150˚C - 1.75 2.2 V
IF = 5 A; - 2.0 2.9 V Reverse current VR = 600 V - 9 100 μA
VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA
trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 50 ns
trr Reverse recovery time IF = 5 A; VR = 400 V; - 19 - ns
dIF/dt = 500 A/μs
trr Reverse recovery time IF = 5 A; VR = 400 V; - 25 30 ns
dIF/dt = 500 A/μs; Tj = 100˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A
dIF/dt = 50 A/μs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A
dIF/dt = 500 A/μs; Tj = 125˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs- 9 11 V
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
Vin Vo = 400 V d.c.
500 V MOSFET
150 uH
OUTPUT DIODEtyp
Vin Vin = 400 V d.c.
inductive loadIR
��� Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
Fig.3. Maximum forward dissipation per diode as a
function of average forward current; rectangular
current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses per
diode, as a function of rate of change of current dIF/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time trr, per diode as a
function of rate of change of current dIF/dt. 2345 6780
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
time Irrm
dIF/dt
ID = IL
losses due to
diode reverse recovery
100 10000
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
100 100010
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W) 10001
100
��� Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters trr, Irrm
Fig.10. Typical forward recovery voltage per diode, Vfr
as a function of rate of change of current dIF/dt.
Fig.11. Definition of forward recovery voltage Vfr
Fig.12. Typical and maximum forward characteristic
per diode, IF = f(VF); Tj = 25˚C and 150˚C.
Fig.13. Typical reverse leakage current per diode as
a function of reverse voltage. IR = f(VR); parameter Tj
Fig.14. Maximum thermal impedance per diode,
Zth j-mb as a function of pulse width.s 100%10%
timeRFrrmrr
012 34
Forward voltage, VF (V) 50 100 150 2000
Rate of change of current, dIF/dt (A/ s) 100 200 300 400 500 6001uA
10uA
100uA
1mA
10mA
100mA
Reverse voltage (V)
Reverse leakage current (A)
time
timeFfrFF
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
��� Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,03,0 max
not tinned
1,3
max
(2x) 3
2,4
0,6
4,5
max
5,9min
15,8max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
