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Partno	Mfg	Dc	Qty	Available	Descript
BYC10-600 \|BYC10600	NXP	N/a	198	avai	Hyperfast power diode

BYC10-600 ,Hyperfast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYC10-600CT ,Dual hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10-600CT ,Dual hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10B-600 ,Hyperfast power diode
BYC10B-600 ,Hyperfast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYC10X-600 ,Hyperfast power diodeThermal characteristicsSymbol Parameter Conditions Min Typ Max UnitR thermal resistance from juncti ..
C-361G , SINGLE DIGIT DISPLAY
C-361G , SINGLE DIGIT DISPLAY
C3622 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3623 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT
C3626 , 1700 WATTS (AC) DC/D CSINGLE OUTPUT

BYC10-600
Hyperfast power diode
TO-220AC BYC10-600
Hyperfast power diode27 May 2013 Product data sheet General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package Features and benefits Extremely fast switching• Low reverse recovery current• Low thermal resistance• Reduces switching losses in associated MOSFET Applications Continuous Current Mode (CCM) Power Factor Correction (PFC)• Half-bridge/full-bridge switched-mode power supplies• Half-bridge lighting ballasts Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reverse
voltage - 600 V
IF(AV) average forward
current
δ = 0.5 ; Tmb ≤ 78 °C; square-wave
pulse; Fig. 1; Fig. 2 - 10 A
Static characteristics forward voltage IF = 10 A; Tj = 150 °C; Fig. 4 - 1.4 1.8 V
Dynamic characteristics
trr reverse recovery time IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 6 19 - ns
NXP Semiconductors BYC10-600
Hyperfast power diode Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode mb mounting base; connected tocathode 2
TO-220AC (SOD59)
001aaa020K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYC10-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mountinghole; 2-lead TO-220AC SOD59 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage Tmb ≤ 114 °C - 500 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 78 °C; square-wave
pulse; Fig. 1; Fig. 2 10 A
IFRM repetitive peak forward current δ = 0.5 ; Tmb ≤ 78 °C; square-wave
pulse 20 A
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse 65 AIFSM non-repetitive peak forward
current
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse 71 A -40 150 °C - 150 °C
NXP Semiconductors BYC10-600
Hyperfast power diode
IF(AV) (A)0 16124 8
003aak437
Ptot
(W)
δ = 1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;maximum values
IF(AV) (A)0 1084 62
003aak457
Ptot
(W)
a = 1.571.92.2
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;maximum values Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction to
mounting base
Fig. 3 - - 2 K/W
Rth(j-a) thermal resistancefrom junction to
ambient free air
in free air - 60 - K/W
003aad983(s) 10110-1 10-3 10-2-4δ=
NXP Semiconductors BYC10-600
Hyperfast power diode Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IF = 10 A; Tj = 25 °C; Fig. 4 - 2 2.9 V
IF = 10 A; Tj = 150 °C; Fig. 4 - 1.4 1.8 V forward voltage
IF = 20 A; Tj = 150 °C; Fig. 4 - 1.7 2.3 V
VR = 600 V; Tj = 25 °C; Fig. 5 - 9 200 µAIR reverse current
VR = 500 V; Tj = 100 °C; Fig. 5 - 1.1 3 mA
Dynamic characteristics
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 6 35 55 ns
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 6 19 - ns
trr reverse recovery time
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 100 °C; Fig. 6 32 40 ns
IF = 10 A; VR = 400 V; dIF/dt = 100 A/
µs; Tj = 125 °C; Fig. 6 3 7.5 AIRM peak reverse recoverycurrent
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 125 °C; Fig. 6 9.5 12 A
VFRM forward recovery
voltage
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
Fig. 7 8 11 V
NXP Semiconductors BYC10-600
Hyperfast power diode
VF (V)0 431 2
003aak458
(A)
(1) (2)(2) (3)
Fig. 4. Forward current as a function of forward
voltage
003aak459
VR (V)0 600400200
10-2IR
(A)
(1)
(2)
(3)
(4)
(5)
Fig. 5. Reverse leakage current as a function of
reverse voltage; typical values
trr
time
100%% dlF 001aab912
time
time
VFRM
Fig. 7. Forward recovery definitions
NXP Semiconductors BYC10-600
Hyperfast power diode
10. Package outline
sod059_po
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59

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