BUZ90A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ90A ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max.
BUZ90A. ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ91A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ93 ,Power MOSFETBUZ 93® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
BVS-A-R002-1.0 , Precision Resistors
C30T10Q , Schottky Barrier Diode
C30T10Q-11A , Schottky Barrier Diode
C30T10Q-11A , Schottky Barrier Diode
C3112 , TYPE CMP / CL3P
C3112 , TYPE CMP / CL3P
C3114 , TYPE CMP / CL3P
BUZ90A-BUZ90A.
Power MOSFET
BUZ 90 A
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
Maximum Ratings
BUZ 90 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 90 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 90 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 90 A
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
20
30
40
50
60
80 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-1 10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 90 A
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs510152025303540V50DSD
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS
0.01.02.03.04.05.06.0A8.0D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0 fs
