BUZ90 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ90A ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max.
BUZ90A. ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ91A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ93 ,Power MOSFETBUZ 93® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode
C30T06QH , Schottky Barrier Diode
C30T06QH-11A , Schottky Barrier Diode
C30T10Q , Schottky Barrier Diode
C30T10Q-11A , Schottky Barrier Diode
BUZ90
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
