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Partno	Mfg	Dc	Qty	Available	Descript
BUZ80A	SIEMENS	N/a	45	avai	Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220
BUZ80A. \|BUZ80A	INFINEON	N/a	13	avai	Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220

BUZ80A ,Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220BUZ80A N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220FAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 ..
BUZ80A. ,Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220ELECTRICAL CHARACTERISTICS(Tcase =25 C unless otherwisespecified)OFFSymbol Parameter Test Condition ..
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BUZ80A-BUZ80A.
Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220
BUZ80A- CHANNEL 800V- 2.5Ω - 3.8A- TO-220
FAST POWER MOS TRANSISTOR TYPICAL RDS(on)= 2.5Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100%AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUZ80A
VDS Drain-source Voltage (VGS =0) 800 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 800 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C3.8 A Drain Current (continuous)atTc =100o C2.3 A
IDM(•) Drain Current (pulsed) 15 A
Ptot Total DissipationatTc =25o C100 W
Derating Factor 0.8 W/oC
VISO Insulation Withstand Voltage (DC)  V
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulsewidth limitedby safeoperating area
TYPE VDSS RDS(on) ID
BUZ80A 800V <3Ω 3.8A
November 19982
TO-220
1/9
THERMAL DATA
TO-220
Rthj-case Thermal Resistance Junction-case Max 1.25 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max)
3.8 A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
200 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8 Tc =100oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage
VDS =VGS ID= 250 μA 234 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID =1.7A
VGS= 10V ID =1.7A Tc =100oC
2.5 3
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
3.8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =1.7A 1 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS=0 1100
BUZ80A
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =30V ID =2.3A =50 Ω VGS =10V
(see test circuit, figure3)
(di/dt)on Turn-on Current Slope VDD= 600V ID =3.8A =50 Ω VGS =10V
(see test circuit, figure5) 110 A/μs
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 400V ID =5A VGS =10V 55 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD= 600V ID =3.8A =50 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =4A VGS =0 2 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=4A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Area Thermal Impedance
BUZ80A
3/9
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
BUZ80A
4/9
CapacitanceVariations
Normalized On Resistancevs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltagevs
Temperature
Turn-on Current Slope
Cross-over Time
BUZ80A
5/9
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
Accidental OverloadArea
BUZ80A
6/9

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