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BUZ77A
Power MOSFET
BUZ 77 A
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
Maximum Ratings
BUZ 77 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 77 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 77 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 77 A
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.8 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
20
30
40
50
60
80 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-1 10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 77 A
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs1020304050V70DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS
0.01.02.03.04.0A6.0D
10
11
13 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
4.0 fs
