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BUZ73AL
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 73AL
. Logic Level
VPT05155
Pin 1 Pin 2 Pin 3
Type VDs ID Rosmn) Package Ordering Code
BUZ 73 AL 200 v 5.5 A 0.6 n TO-220 AB C67078-S1328-A3
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 37 ( 5.5
Pulsed drain current IDpuls
TC = 25 ( 22
Avalanche current,limited by Timax [AR 7
Avalanche energy,periodic limited by ijax EAR 6.5 mJ
Avalanche energy, single pulse EAS
ID=7A, VDD-- 50V, RGS=25Q
L=3.67 mH, Tj=25°C 120
Gate source voltage VGS i 20 V
ESD-Sensitivity HBM as per MlL-STD 883 Class 1
Power dissipation Ptot W
TC = 25 ( 40
Operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC f 3.1 K/W
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
Infineon BUZ 73AL
tec h n ologies/
Electrical Characteristics, at Ti. = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
Vss = 0 V, ID = 0.25 mA, T, = 25''C 200 - -
Gate threshold voltage VGSM
Vss--Vrys, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current toss pA
VDS=200V, VGS=0V, Tj=25°C - 0.1 1
"os=2001/,vGs=01/,rj=125''C - 10 100
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-resistance RDS(on) Q
Vss = 5 V, ID = 3.5 A - 0.5 0.6
Data Sheet 2 05.99
