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BUZ72L
N-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 72L
. Logic Level
VPT05155
Pin 1 Pin 2 Pin 3
Type VDs ID RDS(on) Package Ordering Code
BUZ 72 L 100 V 10 A 0.2 n TO-220 AB C67078-SI327-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 25 ( 10
Pulsed drain current leuls
TC = 25 ( 40
Avalanche current,|imited by Timax [AR 10
Avalanche energy,periodic limited by ijax EAR 7.9 mJ
Avalanche energy, single pulse EAS
ID: 10A, VDD=25V, RGS=25£2
L=885pH,7]=25°C 59
Gate source voltage VGS i 20 V
ESD-Sensitivity HBM as per MIL-STD 883 Class 1
Power dissipation Ptot W
TC = 25 ( 40
Operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RING S 3.1 K/W
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tlniinlmm BUZ 72L
ec n o 09y
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS=OV, ID= 0.25 mA, Tj=25 ( 100 - -
Gate threshold voltage VGSM
VGS=VDS, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current loss pA
bbs=100V,Vss=0V, Tj=25°c - 0.1 1
bbs=1001/,vss=01/,rj=125''C - 10 100
Gate-source leakage current IGSS nA
VGS=20V,VDS=0V - 10 100
Drain-Source on-resistance RDS(on) Q
VGS=5V,ID=5A - 0.12 0.2
Data Sheet 2 05.99
