BUZ71A ,13A, 50V, 0.120 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 13A, 50VThis is an N-Channel enhancement mode silicon gate power = 0.120Ω•rDS(ON)fi ..
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ72A ,9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
BUZ72L ,N-Channel SIPMOS Power Transistor BUZ 72L® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Le ..
BUZ73 ,SIPMOS Power Transistor
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode
C30T06QH , Schottky Barrier Diode
C30T06QH-11A , Schottky Barrier Diode
BUZ71A
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET
BUZ71A
13A, 50V, 0.120 Ohm, N-Channel Power
MOSFETThis is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features 13A, 50V
DS(ON)
= 0.120 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering InformationNOTE: When ordering, use the entire part number.