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Partno	Mfg	Dc	Qty	Available	Descript
BUZ71	INFINEON	N/a	1	avai	14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
BUZ71	HAR	N/a	15	avai	14A, 50V, 0.100 Ohm, N-Channel Power MOSFET

BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71A ,13A, 50V, 0.120 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 13A, 50VThis is an N-Channel enhancement mode silicon gate power = 0.120Ω•rDS(ON)ﬁ ..
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ72A ,9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode

BUZ71
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
BUZ71
N - CHANNEL 50V - 0.085Ω - 17A TO-220
STripFET POWER MOSFET TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

July 1999
ABSOLUTE MAXIMUM RATINGS
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING
BUZ71
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ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
BUZ71
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
BUZ71
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
BUZ71
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
BUZ71
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