BUZ60 ,SIPMOS Power Transistortll - - 7777770.-_7.;7,77 '-, --, -
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BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71A ,13A, 50V, 0.120 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 13A, 50VThis is an N-Channel enhancement mode silicon gate power = 0.120Ω•rDS(ON)fi ..
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode
BUZ60
SIPMOS Power Transistor
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BUZ S8 A
SIEMENS AKTIENGESELLSCHAF
Main ratings N-Channel
Draln-source voltage kss " 1000 V
Continuous drain current I, " 3,6 A
Draln-source on-reslstance Row", " 2.60
Descriptlon SIPMOS, N-channel, enhancement mode s
Case Plastic package TO 238 AA with Insulated metal base plate in accordance with
JEDEC, compatible with TO 3; AMP plug-ln oonnetgtions.
Approx. weight 21 g
Type I Ordering coda
BUZ 58 A 1 C67078-A1607-A3
Maximum ratings
b,8x0,8
6,3x0,8
Dimensions In mm
Description Symbols Ratings Units Condltlons
DraIn-source voltage Ta, 1000 V
Drain-gate voltage Vnan 1000 V Hes --- 20 k9
Continuous draln current ID 3,6 A Tc == 30 "C
Pulsed drain current Inputs 14 A Tc -- 25 "C
Gate-source voltage Vas A20 V
Max, power dlsslpatlon PD 83,3 W To = 25 "C
Operating and storage T
temperature range To -40... + 150 "C
isolation testvoltage V,, 3500 Vdc') t --- 1 min
DIN humidity category F - DIN 40040
lEC climatic category 40/150/56 DIN IEC 68-1
Thermal resistance
CNP-case l RM l 51.5 l k/W l
n Isolation test voltage between drain and base plate referred to standard climate 23150 In accordance with DIN 50014.
861) 1) c::1_1ii151sort1tn'"sl1s T :13:
380 14685 D 713443
BUZ58A
SIEMENS AKTTE:N6ESELl..SCHhF
Electrical characteristics
(at T == 25°C unless otherwlse specified)
Description Symbol Gharttttteriatltra Unlt Conditions
min. I typ, I max.
Static ratings
Draln-source V(Bmpss 1000 - - V Vas = 0V
breakdown voltage ID a 0,25mA
Gate threshold voltage Vesum 2,1 3,0 4,0 V93 =-. Vas
10 = 1mA
Zero gate voltage a, - 20 250 11A r, = 25 =
drain current - 100 1000 T - 125°C
Vos a 1000V
Ves == 0V
Gate-source leakage lass - 10 100 nA Vas = 20V
current V95 = 0V
Drain-source Hush", - 2,3 2,6 n Vas - 10V
on-reslstance I, = 2,6A
Dynamlc ratings
Forward M, 1,4 3,5 - S kos - 25V
transconductance ID = 2,6A
Input capacitance G,, - " 5,0 nF Ves == 0V
Output capacitance Cm - 180 300 pF Vos = 'tl
Reverse transfer ti,, - 70 120 f = E
capacitance
Turn-on time c, t, Ion) - 60 90 ns Vcc _ 30V
(tun '" tsem, + tr) t, - 90 140 ID = 2AA
. Vas " 10V
Turn-off time to" to, - 330 430
m as == 509
(G, = tses, + h) t, - 110 140
Reverse dlode
Contlnuous reverse Ion - - 3,6 A Tc - 25 "C
drain current
Pulsed reverse drain 1mm - -. 14
current
Diode forward on-voltage V30 - 1,1 1,4 V ' = 2x a
Vas = ov, T '" 25°C
Reverse recovery tlme t,, - 2000 - ns li = 25°C
Reverse recovery Orr - so - wc IF = Ion
charge drat = 100A/ps
Va =' 1 V
0977 6-06
