BUZ50B ,N-Channel SIPMOS Power TransistorBUZ 50 B® SIPMOS Power Transistor• N channel• Enhancement modePin 1 Pin 2 Pin 3G D SType V I R Pack ..
BUZ60 ,SIPMOS Power Transistortll - - 7777770.-_7.;7,77 '-, --, -
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88D 14684 D 7.3443
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BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETBUZ71®N - CHANNEL 50V - 0.085Ω - 17A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DBUZ71 50 ..
BUZ71A ,13A, 50V, 0.120 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 13A, 50VThis is an N-Channel enhancement mode silicon gate power = 0.120Ω•rDS(ON)fi ..
BUZ72 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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BUZ50B
N-Channel SIPMOS Power Transistor
BUZ 50 B
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
Maximum Ratings
BUZ 50 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 50 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 50 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 50 B
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
20
30
40
50
60
80 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-2 10
-1 10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 50 B
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs102030405060V80DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS
0.00.40.81.21.62.02.42.8A3.6D
10
12
14
16
18
20
22
26 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
3.0 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.0
0.5
1.0
2.0 fs
