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BUZ350
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 350
Pin 1 Pin 2 Pin 3
Type VDs ID RDs(on) Package Ordering Code
BUZ 350 200 V 22 A 0.12 n TO-218 AA C67078-S3117-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 33 ( 22
Pulsed drain current leuls
TC = 25 ( 88
Avalanche current,|imited by ijax [AR 22
Avalanche energy,periodic limited by Tjmax EAR 12 mJ
Avalanche energy, single pulse EAS
ID=22A, VDD-- 50V, RGS=25Q
L=1.39 mH, Tj=25°C 450
Gate source voltage VGS i 20 V
Power dissipation Ptot W
TC = 25 ( 125
Operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 1 KM
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tInfinlmn BUZ 350
ec n o 09y
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
vss = 0 V, ID = 0.25 mA, T, = 25''C 200 - -
Gate threshold voltage Vesah)
Vss--VDs, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
bbs=200V, VGS=OV, Tj=25°C - 0.1 1
VDS=200V,VGS=OV,7]=125°C - 10 100
Gate-source leakage current IGss nA
VGS=20V,VDS=0V - 10 100
Drain-Source on-resistance RDS(on) Q
Vss=10V, ID=14A - 0.09 0.12
Data Sheet 2 05.99
