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BUZ347
N-Channel SIPMOS Power Transistor
BUZ 347
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
Maximum Ratings
BUZ 347
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 347
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 347
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 347
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
10
15
20
25
30
35
40
50 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
20
30
40
50
60
70
80
90
100
110
130 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 347
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.01.02.03.04.0V6.0DS
10
20
30
40
50
60
70
80
100 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS10203040506070A90D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.09 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10
15
20
25
30
35
40
45
50
60 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
10
12
14
16
18
20
22
24
26
30 fs
