BUZ344 ,Low Voltage MOSFETs BUZ 344® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin ..
BUZ347 ,N-Channel SIPMOS Power TransistorBUZ 347Not for new design® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pi ..
BUZ350 ,Low Voltage MOSFETs BUZ 350® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin ..
BUZ384 , SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
BUZ384 , SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
BUZ40 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ344
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 344
Pin 1 Pin 2 Pin 3
Type VDs ho Roswn) Package Ordering Code
BUZ 344 100 V 50 A 0.035 n TO-218 AA C67078-83132-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 25 ( 50
Pulsed drain current IDpuls
TC = 25 ( 200
Avalanche current,limited by Tjmax [AR 50
Avalanche energy,periodic limited by Tjmax EAR 18.5 mJ
Avalanche energy, single pulse EAS
ID=50A, VDD=25V, Rss=25Q
L=240 pH, Tj=25°C 400
Gate source voltage VGs i 20 V
Power dissipation Ptot W
TC = 25 ( 170
Operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 0.74 KNV
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tIniinleon BUZ 344
ec no 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = o v, /D = 0.25 mA, r, = 25 "C 100 - -
Gate threshold voltage VGS
VGS= Vros, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
bbs=1001/,i/Gs=0V,Tj=25''C - 0.1 1
VDS=100V,VGS=OV,TJ-=125°C - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDS(0n) Q
VGS = 10 v, /D = 32 A - 0.03 0.035
Data Sheet 2 05.99
 |
|
|
|
TEL:86-533-2716050 FAX:86-533-2716790
 
©2020 IC PHOENIX CO.,LIMITED
|
| 