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BUZ32
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 32
Pin 1 Pin 2 Pin 3
Type VDs h, Rosmn) Package Ordering Code
BUZ 32 200 V 9.5 A 0.4 Q TO-220 AB C67078-S1310-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 29 ( 9.5
Pulsed drain current leuls
To = 25 ( 38
Avalanche current,|imited by ijax JAR 9.5
Avalanche energy,periodic limited by Tjmax EAR 6.5 mJ
Avalanche energy, single pulse EAS
ID = 9.5 A, VDD = 50 V, Rss = 25 Q
L=2mH,TJ-=25°C 120
Gate source voltage VGS i 20 V
Power dissipation Ptot W
TC = 25 ( 75
Operating temperature Tj -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC f 1.67 K/W
Thermal resistance, chip to ambient Rth 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tInfinleon BUZ 32
ec no 09y
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, T] = 25°C 200 - -
Gate threshold voltage VGS(th)
VGS= VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
VDS=200V, VGS=OV, Tj=25°C - 0.1 1
VDS=200V,VGS=OV,TJ-=125°C - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDSM) Q
VGS=1OV,ID=6A - 0.3 0.4
Data Sheet 2 05.99
