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BUZ312
N-Channel SIPMOS Power Transistor
BUZ 312
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
Maximum Ratings
BUZ 312
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 312
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 312
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 312
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120°C160C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5 D
Power dissipation tot = ƒ(TC)20406080100120°C160C
20
40
60
80
100
120
160 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-1 10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10
K/W thJC
BUZ 312
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs10203040V55DS
10
11
12
14 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS246810A13D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
12 fs
