BUZ31 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
BUZ31 ,Low Voltage MOSFETs BUZ 31® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin ..
BUZ312 ,N-Channel SIPMOS Power TransistorBUZ 312® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
BUZ32 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 32® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin ..
BUZ325 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ332A ,Power MOSFETBUZ 332 A® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G ..
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ31
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 31
VPT05155
Pin 1 Pin 2 Pin 3
Type VDs ID RDs(on) Package Ordering Code
BUZ 31 200 V 14.5 A 0.2 n TO20 AB C67078-S.1304-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 30 ( 14.5
Pulsed drain current ’Dpuls
TC = 25 ( 58
Avalanche current,limited by ijax [AR 14.5
Avalanche energy,periodic limited by Timax EAR 9 mJ
Avalanche energy, single pulse EAS
ID =14.5 A, VDD = 50 V, RGS = 25 Q
L=1.42 mH, Tj=25°C 200
Gate source voltage VGS i 20 V
Power dissipation Ptot W
To = 25 ( 95
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 1.32 KNV
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
,lnfiqeon BUZ 31
ec no 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 v, /D = 0.25 mA, r, = 25°C 200 - -
Gate threshold voltage VGS(th)
Kas-- VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current loss pA
VDS=200V, VGS=OV, Tj=25°C - 0.1 1
VDS=200V,VGS=OV,TJ-=125°C - 10 100
Gate-source leakage current IGSS nA
VGS=20V,VDS=OV - 10 100
Drain-Source on-resistance RDS(0n) Q
VGS=1OV,ID=9A - 0.16 0.2
Data Sheet 2 05.99
