BUZ30A ,Low Voltage MOSFETsBUZ 30A® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
BUZ30A ,Low Voltage MOSFETsCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ30A. ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
BUZ31 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
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BUZ312 ,N-Channel SIPMOS Power TransistorBUZ 312® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ30A-BUZ30A.
Low Voltage MOSFETs
tInfinleon BUZ 30A
ec no 09y
SIPMOS © Power Transistor
.""...
. N channel 2 EH
. Enhancement mode l -
. Avalanche-rated
Pin 1 Pin 2 Pin 3
Type VDS h, Roswn) Package Ordering Code
BUZ 30A 200 V 21 A 0.13 Q TO-220 AB C67078-S1303-A3
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 26 ( 21
Pulsed drain current leuls
To = 25 ( 84
Avalanche current,|imited by ijax JAR 21
Avalanche energy,periodic limited by Tjmax EAR 12 mJ
Avalanche energy, single pulse EAS
ID=21A, VDD=50V,RGS=25§2
L=1.53mH, Tj=25°C 450
Gate source voltage VGS i 20 V
Power dissipation Ptot W
To = 25 ( 125
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC f 1 KNV
Thermal resistance, chip to ambient Rth 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tlniinleon BUZ 30A
ec no 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V
DSS V
VGS = o V, ID = 0.25 mA, r, = 25''C 200 - -
Gate threshold voltage VGS(th)
VGS= VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
VDS=200V, VGS=OV, Tj=25°C - 0.1 1
vbs=2001/,i/Gs=0V,rj=125''C - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDS(on) Q
VGS=1OV,ID=13.5A - 0.1 0.13
Data Sheet 2 06.99
