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Partnumber	Manufacturer	Quantity	Availability
BUZ30A Manufacturer: INFINEON Low Voltage MOSFETs
BUZ30A	INFINEON	597	In Stock
Description and Introduction Low Voltage MOSFETs The BUZ30A is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications: - Type: N-channel - Drain-Source Voltage (V_DS): 100V - Continuous Drain Current (I_D): 3A - Pulsed Drain Current (I_DM): 12A - Power Dissipation (P_D): 30W - Gate-Source Voltage (V_GS): ±20V - On-Resistance (R_DS(on)): 0.5Ω (max) at V_GS = 10V - Threshold Voltage (V_GS(th)): 2-4V - Input Capacitance (C_iss): 150pF (typical) - Output Capacitance (C_oss): 50pF (typical) - Reverse Transfer Capacitance (C_rss): 10pF (typical) - Turn-On Delay Time (t_d(on)): 10ns (typical) - Turn-Off Delay Time (t_d(off)): 35ns (typical) - Package: TO-220AB These specifications are based on Infineon's datasheet for the BUZ30A.
Partnumber	Manufacturer	Quantity	Availability
BUZ30A	SIEMENS	177	In Stock
Description and Introduction Low Voltage MOSFETs The BUZ30A is a power MOSFET manufactured by SIEMENS. Here are its key specifications: - Type: N-channel - Drain-Source Voltage (V_DSS): 100V - Continuous Drain Current (I_D): 30A - Pulsed Drain Current (I_DM): 120A - Power Dissipation (P_D): 125W - Gate-Source Voltage (V_GS): ±20V - On-Resistance (R_DS(on)): 0.04Ω (typical) - Threshold Voltage (V_GS(th)): 2-4V - Input Capacitance (C_iss): 1500pF - Package: TO-220 These specifications are based on SIEMENS' datasheet for the BUZ30A MOSFET.

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