BUZ272 ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ305 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ30A ,Low Voltage MOSFETsBUZ 30A® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
BUZ30A ,Low Voltage MOSFETsCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ30A. ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
BUZ31 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
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C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ272
P-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. P channel
. Enhancement mode
. Avalanche rated
BUZ 272
Pin 1 Pin 2 Pin 3
Type VDS ho RDS(0n) Package Ordering Code
BUZ 272 -100 V -15 A 0.3 Q TO-220 AB C67078-S1454-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 25 ( -15
Pulsed drain current leuls
TC = 25 ( -60
Avalanche energy, single pulse EAS mJ
ID = -15 A, VDD = -25 V, Rss = 25 Q
L=1.93mH, Tj=25''C 290
Gate source voltage VGs i 20 V
Power dissipation Ptot W
TC = 25 ( 125
Operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 1 KNV
Thermal resistance, chip to ambient Rth f 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
,lnfiqeon BUZ 272
ec no 09y
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = o V, ID = -0.25 mA, Tj = 25'C -100 - -
Gate threshold voltage VGS(th)
veg: vDS, ID = 1 mA -2.1 -3 -4
Zero gate voltage drain current IDSS pA
VDS = -100 V, VGS = o V, Tj = 25°C - -o.1 -1
VDS=-100V, VGS=0V, Tj=125°C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 v, VDS = o v - -10 -100
Drain-Source on-resistance RDSM) Q
VGS = -10 V, ID = -9.5 A - 0.2 0.3
Data Sheet 2 05.99
