BUZ22 ,N-Channel SIPMOS Power Transistor BUZ 22® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 ..
BUZ272 ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ305 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ30A ,Low Voltage MOSFETsBUZ 30A® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 Pin 3G D ..
BUZ30A ,Low Voltage MOSFETsCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ30A. ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 200 - -GS ..
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
BUZ22
N-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 22
VPT05155
Pin 1 Pin 2 Pin 3
Type VDs ho RDs(on) Package Ordering Code
BUZ 22 100 V 34 A 0.055 Q TO-220 AB C67078-S1333-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 27 ( 34
Pulsed drain current IDpuls
TC = 25 ( 136
Avalanche current,limited by ijax [AR 34
Avalanche energy,periodic limited by ijax EAR 15 mJ
Avalanche energy, single pulse EAS
ID=34A, VDD=25V, Rss=25Q
L = 285.5 pH, T] = 25 ( 220
Gate source voltage VGs i 20 V
Power dissipation Ptot W
TC = 25 ( 125
Operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC f 1 KNV
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tlniinleon BUZ 22
ec no 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V
DSS V
VGS = 0 v, /D = 0.25 mA, Tj-- 25 "C 100 - -
Gate threshold voltage VGS(th)
VGS= VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
bbs=1001/,i/Gs=01/,rj=25t'C - 0.1 1
vbs=1001/,i/Gs=0V,rj=125''C - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDS(on) Q
VGS = 10 v, /D = 22 A - 0.05 0.055
Data Sheet 2 05.99
