BUZ21L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
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BUZ21L
N-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 21L
. Logic Level
VP105155
Pin 1 Pin 2 Pin 3
Type VDs h, RDS(on) Package Ordering Code
BUZ 21 L 100 V 21 A 0.085 n TO-220 AB C67078-S1338-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 25 ( 21
Pulsed drain current IDpuls
To = 25 ( 84
Avalanche current,limited by ijax [AR 21
Avalanche energy,periodic limited by ijax EAR 11.5 mJ
Avalanche energy, single pulse EAS
ID=21A, VDD=25V,RGS=25Q
L=340 pH, 7]=25°C 100
Gate source voltage VGS i- 20 V
ESD-Sensitivity HBM as per MIL-STD 883 Class 1
Power dissipation Ptot W
To = 25 ( 75
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 1.67 K/W
Thermal resistance, chip to ambient Rth 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tInfinleon BUZ 21L
ec no 09y
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V
DSS V
VGS = 0 V, ID = 0.25 mA, r, = 25''C 100 - -
Gate threshold voltage VGS(th)
VGS= VDS, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current IDSS pA
its=1001/,v'Gs=0v,ri=25''C - 0.1 1
bbs=100V,i/Gs=01/,rr=125''c - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDS(on) Q
VGS = 5 v, ID = 10.5 A - 0.075 0.085
Data Sheet 2 05.99
