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BUZ20
N-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. N channel
. Enhancement mode
. Avalanche-rated
BUZ 20
Pin 1 Pin 2 Pin 3
Type VDs ho RDs(on) Package Ordering Code
BUZ 20 100 V 13.5 A 0.2 Q TO-220 AB C67078-S1302-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 28 ( 13.5
Pulsed drain current [DWIs
TC = 25 ( 54
Avalanche current,limited by ijax [AR 13.5
Avalanche energy,periodic limited by ijax EAR 7.9 mJ
Avalanche energy, single pulse EAS
ID =13.5 A, VDD = 25 V, RGS = 25 Q
L=486yH,ri=25( 59
Gate source voltage VGS , 20 V
Power dissipation Ptot W
To = 25 ( 75
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 1.67 KNV
Thermal resistance, chip to ambient RNA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tIniinleon BUZ 20
ec no 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = o v, /D = 0.25 mA, r, = 25 "C 100 - -
Gate threshold voltage VGS
VGS= Vros, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS pA
bbs=1001/,i/Gs=0V,Tj=25''C - 0.1 1
VDS=100V,VGS=OV,TJ-=125°C - 10 100
Gate-source leakage current IGSS nA
VGs=20V,VDs=0V - 10 100
Drain-Source on-resistance RDS(0n) Q
VGS=10V,ID=8.5A - 0.17 0.2
Data Sheet 2 05.99
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