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BUZ173
P-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. P channel
. Enhancement mode
. Avalanche rated
BUZ 173
Pin 1 Pin 2 Pin 3
Type VDs ID RDSion) Package Ordering Code
BUZ 173 -200 V -3.6 A 1.5 Q TO-220 AB C67078-S1452-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 30 ( -3.6
Pulsed drain current IDpuls
TC = 25 ( -14
Avalanche energy, single pulse EAS mJ
b = -3.6 A, VDD = -25 v, RGS = 25 n
L=23mH,Tj=25''C 200
Gate source voltage VGS i 20 V
Power dissipation Ptot W
TC = 25 ( 40
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC f 3.1 KNV
Thermal resistance, chip to ambient Rth f 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tInfinleon BUZ173
ec no 09y
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = o V, ID = -0.25 mA, Tj = 25'C -200 - -
Gate threshold voltage VGS(th)
VGS= VDS, ID = 1 mA -2.1 -3 -4
Zero gate voltage drain current IDSS pA
VDS = -200 V, VGS = o V, Tj = 25''C - -o.1 -1
VDS=-200 V, VGS= 0v, Tj= 125°C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 v, VDS = o v - -10 -100
Drain-Source on-resistance RDSM) Q
VGS=-1OV, ID=-2.3A - 1.2 1.5
Data Sheet 2 05.99
