BUZ172 ,SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ173 ,P-Channel SIPMOS Power Transistor BUZ 173® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 ..
BUZ20 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 20® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 ..
BUZ21 ,19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 19A, 100V[ /TitleThis is an N-Channel enhancement mode silicon gate power = 0.100Ω• ..
BUZ21L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
BUZ21L ,N-Channel SIPMOS Power Transistor BUZ 21L® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Lev ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ172
P-Channel SIPMOS Power Transistor
Infineon
technologies
SIPMOS © Power Transistor
. P channel
. Enhancement mode
. Avalanche rated
BUZ 172
Pin 1 Pin 2 Pin 3
Type VDs ID RDS(on) Package Ordering Code
BUZ 172 -100 V -5.5 A 0.6 n TO-220 AB C67078-S1451-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
To = 37 ( -5.5
Pulsed drain current topuis
To = 25 ( -22
Avalanche energy, single pulse EAS mJ
ID = -5.5 A, VDD = -25 V, RGS = 25 n
L=8.4 mH, Tj=25°C 170
Gate source voltage VGS i 20 V
Power dissipation Ptot W
TC = 25 ( 40
Operating temperature T] -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case Rth f 3.1 KM
Thermal resistance, chip to ambient Rth f 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Data Sheet
tlngtinlmn BUZ172
ec n o 09y
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = o v, /D = -0.25 mA, Tj = 25 ''C -100 - -
Gate threshold voltage VGS(th)
VGS= Vros, ID = 1 mA -2.1 -3 -4
Zero gate voltage drain current IDSS pA
bbs = -100 v, VGS = o v, Tj = 25°C - -0.1 -l
VDS=-100V, VGS=OV, Tj=125°C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 V, VDS = o v - -10 -100
Drain-Source on-resistance RDS(on) Q
VGS = -10 v, /D = -3.7 A - 0.4 0.6
Data Sheet 2 05.99
