BUZ171 ,P-Channel SIPMOS Power TransistorBUZ 171® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 Pin 3G D ..
BUZ171 ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -50 - -GS ..
BUZ172 ,SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ173 ,P-Channel SIPMOS Power Transistor BUZ 173® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 ..
BUZ20 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 20® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 ..
BUZ21 ,19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 19A, 100V[ /TitleThis is an N-Channel enhancement mode silicon gate power = 0.100Ω• ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ171
P-Channel SIPMOS Power Transistor
BUZ 171
SIPMOS ®
Power Transistor• P channel
• Enhancement mode
• Avalanche rated
Maximum Ratings
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 171
Power dissipation tot = ƒ(TC)20406080100120°C160C
10
15
20
25
30
35
45 tot
Drain current D = ƒ(TC)
parameter: VGS ≥ -10 V20406080100120°C160C
-1
-2
-3
-4
-5
-6
-7
-9 D
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-1 -10 -10 -10 -10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 171
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs-2-4-6-8-10-12-14-16V-19DS
-2
-4
-6
-8
-10
-12
-14
-18 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS-2-4-6-8-10-12A-16D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.9 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-15 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
4.0 fs
