BUZ11A ,NBUZ11A®N - CHANNEL 50V - 0.045Ω - 26A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ11A 50 V < ..
BUZ11S2 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ171 ,P-Channel SIPMOS Power TransistorCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ171 ,P-Channel SIPMOS Power TransistorBUZ 171® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 Pin 3G D ..
BUZ171 ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -50 - -GS ..
BUZ172 ,SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ11A
N
BUZ11AN - CHANNEL 50V - 0.045Ω - 26A TO-220
STripFET MOSFET TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
July 1999
ABSOLUTE MAXIMUM RATINGSFirst digit of the datecode being Z or K identifies silicon characterized in this datasheet.
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING
BUZ11A2/8
ELECTRICAL CHARACTERISTICS (continued)SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
BUZ11A3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
BUZ11A4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
BUZ11A5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
BUZ11A6/8
