BUZ111S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsThermal resistance, junction - case - - 0.5 K/WRthJC Thermal resistance, junction - ..
BUZ111S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.008R Ω• Enhancem ..
BUZ111SE3045A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BUZ111SL ,SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.007R Ω• Enhanceme ..
BUZ11A ,NBUZ11A®N - CHANNEL 50V - 0.045Ω - 26A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ11A 50 V < ..
BUZ11S2 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ111S-BUZ111SE3045A
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor BUZ111S
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode Drain-Source on-state resistance RDSM) 0.008 Q
. Avalanche rated Continuous drain current ho 80 A
o d v/dt rated
. 175°C operating temperature
VPT05164
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube G D S
BUZ111S E3045A P-T0263-3-2 Q67040-S4003-A6 Tape and Reel
BUZ111S E3045 P-T0263-3-2 Q67040-S4003-A5 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ''C, 1) 80
TC = 100 ( 80
Pulsed drain current IDpuIse 320
TC = 25 °C
Avalanche energy, single pulse EAS 700 mJ
ID = 80A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 30
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 80 A, VDS = 40 V, di/dt= 200 Alps,
ijax = 175 "C
Gate source voltage VGS i20 V
Power dissipation Ptot 300 W
TC = 25 ''C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
,lnfinleon BUZ111S
ec no 09y
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.5 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area2) - - 40
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage 1/(BR)DSS 55 - - V
VGs = 0 V, ID = 0.25 mA
Gate threshold voltage, VGs = VDS Vegan) 2.1 3 4
ID = 240 yA
Zero gate voltage drain current IDSS pA
VDS=50V,VGS=OV,TJ-=25°C - 0.1 1
VDS=50V,VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) n
VGS = 10 V, ID = 80 A - 0.0065 0.008
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
