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BUZ104SL from SIEMENS

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BUZ104SL

Manufacturer: SIEMENS

N-Channel SIPMOS Power Transistor

Partnumber Manufacturer Quantity Availability
BUZ104SL SIEMENS 6 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The BUZ104SL is a power MOSFET manufactured by SIEMENS. Here are its key specifications:  

- **Type**: N-channel enhancement mode MOSFET  
- **Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 30A  
- **Pulsed Drain Current (IDM)**: 120A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.04Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss)**: 1800pF  
- **Output Capacitance (Coss)**: 600pF  
- **Reverse Transfer Capacitance (Crss)**: 150pF  
- **Turn-On Delay Time (td(on))**: 15ns  
- **Rise Time (tr)**: 60ns  
- **Turn-Off Delay Time (td(off))**: 60ns  
- **Fall Time (tf)**: 25ns  
- **Package**: TO-220  

These specifications are based on SIEMENS' datasheet for the BUZ104SL.

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