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BUZ104SLSIEMENSN/a6avaiN-Channel SIPMOS Power Transistor


BUZ104SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.064R Ω• Enhanceme ..
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BUZ104SL
N-Channel SIPMOS Power Transistor
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fechnologles “mpwo
SIPMOS® Power Transistor
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.064 g
. Avalanche rated Continuous drain current ho 12.5 A
. Logic Level
q dv/dt rated
o 175 "C operating temperature 1J‘3j L
3 VPT05164 VPT05155
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ104SL P-TO220-3-1 Q67040-S4006-A2 Tube G D S
BUZ104SL E3045A P-TO263-3-2 Q67040-S4006-A6 Tape and Reel
BUZ104SL E3045 P-T0263-3-2 Q67040-S4006-A5 Tube
Maximum Ratings, at Ti = 25 ( unless otherwise specified
Parameter . Symbol Value Unit
Continuous drain current ID A
TC = 25 ( 12.5
To = 100 ( 8.8
Pulsed drain current leuIse 50
To = 25 (
Avalanche energy, single pulse EAS 52 mJ
ID =12.5A, VDD = 25 V, RG3 = 25 Q
Avalanche energy, periodic limited by Timax EAR 3.5
Reverse diode dv/dt dv/dt 6 kV/ws
ls =12.5 A, Vos = 40 V, di/dt= 200 A/ps,
Timax = 175 "C
Gate source voltage VGS -20 V
Power dissipation Ptot 35 W
To = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
Infineon BUZ104SL
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case Hthuc - - 4.3 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGS = Vos Vesuh) 1.2 1.6 2
ID = 20 pA
Zero gate voltage drain current IDSS pA
1/Ds=501/,1/Gs--01/,Tj=25''C - 0.1 1
VDs=50V, VGs=0V,T,-=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS=4.5 V, ID =8.8A - 0.1 0.11
VGS = 10 V, ID = 8.8 A - 0.061 0.064
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2 05.99
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