BUZ103SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
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BUZ103SL
N-Channel SIPMOS Power Transistor
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SIPMOS® Power Transistor
Features Product Summary
q N channel Drain source voltage VDS 55 V
q Enhancement mode Drain-Source on-state resistance RDS(on) 0.026 Q
. Avalanche rated Continuous drain current ho 28 A
. Logic Level
q dv/dt rated
o 175 "C operating temperature 1J‘3j L
3 VPT05164 VPT05155
Type Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ103SL P-TO220-3-1 Q67040-S4008-A2 Tube G D S
BUZ103SL E3045A P-TO263-3-2 Q67040-S4008-A6 Tape and Reel
BUZ103SL E3045 P-T0263-3-2 Q67040-S4008-A5 Tube
Maximum Ratings, at Ti = 25 ( unless otherwise specified
Parameter . Symbol Value Unit
Continuous drain current ID A
TC = 25 ( 28
To = 100 ( 20
Pulsed drain current leuIse 112
To = 25 (
Avalanche energy, single pulse EAS 140 mJ
ID =28A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 7.5
Reverse diode dv/dt dv/dt 6 kV/ws
ls = 28 A, VDS = 40 V, di/dt= 200 A/ps,
Timax = 175 "C
Gate source voltage VGS -20 V
Power dissipation Ptot 75 W
To = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
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technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case Hthuc - - 2 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGs = 0 V, ho = 0.25 mA
Gate threshold voltage, VGS = Vos Vesuh) 1.2 1.6 2
ID = 50 pA
Zero gate voltage drain current IDSS pA
1/Ds=501/,1/Gs--01/,Tj=25''C - 0.1 1
VDs=50V, VGs=0V,T,-=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=2OV, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 4.5 V, ID = 20 A - 0.04 0.044
VGS = 10 V, ID = 20 A - 0.0235 0.026
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2
