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BUZ103S from SIEMENS

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15.625ms

BUZ103S

Manufacturer: SIEMENS

N-Channel SIPMOS Power Transistor

Partnumber Manufacturer Quantity Availability
BUZ103S SIEMENS 125 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The BUZ103S is a power MOSFET manufactured by SIEMENS. Below are its key specifications:  

- **Type**: N-channel MOSFET  
- **Drain-Source Voltage (VDS)**: 50V  
- **Continuous Drain Current (ID)**: 30A  
- **Pulsed Drain Current (IDM)**: 120A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-State Resistance (RDS(on))**: 0.04Ω (typical at VGS = 10V)  
- **Threshold Voltage (VGS(th))**: 2-4V  
- **Input Capacitance (Ciss)**: 1500pF (typical)  
- **Output Capacitance (Coss)**: 500pF (typical)  
- **Reverse Transfer Capacitance (Crss)**: 100pF (typical)  
- **Turn-On Delay Time (td(on))**: 10ns (typical)  
- **Rise Time (tr)**: 30ns (typical)  
- **Turn-Off Delay Time (td(off))**: 60ns (typical)  
- **Fall Time (tf)**: 20ns (typical)  
- **Package**: TO-220  

This information is based on SIEMENS' datasheet for the BUZ103S.

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