BUZ103S-E3045A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
BUZ103SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
BUZ104L ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)BUZ 104L® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Level• dv/dt ..
BUZ104L ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ104S ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.08R Ω• Enhanceme ..
BUZ104SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.064R Ω• Enhanceme ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ103S-BUZ103S-E3045A
N-Channel SIPMOS Power Transistor
fechnologles “mpwo
SIPMOS® Power Transistor
Features Product Summary
q N channel Drain source voltage V08 55 V
q Enhancement mode Drain-Source on-state resistance RDs(on) 0.036 n
. Avalanche rated Continuous drain current ID 31 A
. dv/dt rated
q 175 ( operating temperature
VPT05155
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ103S P-TO220-3-1 Q67040-S4009-A2 Tube G D S
BUZ103S E3045A P-TO263-3-2 O67040-S4009-A6 Tape and Reel
BUZ103S E3045 P-TO263-3-2 Q67040-S4009-A5 Tube
Maximum Ratings at Ti = 25 ( unless otherwise specified
Parameter ' Symbol Value Unit
Continuous drain current /D A
To = 25 ( 31
TC = 100''C 22
Pulsed drain current IDpulse 124
TC = 25 (
Avalanche energy, single pulse EAS 140 ml
ID=31A, VDD=25V, RGS=25£2
Avalanche energy, periodic limited by Timex EAR 7.5
Reverse diode dv/dt dv/dt 6 kV/rs
IS = 31 A, VDS = 40 V, di/dt= 200 Alps,
Tmax = 175 "C
Gate source voltage VGS 120 V
Power dissipation Pt0t 75 W
Tc = 25 (
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
Infineon BUZ103S
fee no ogles
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case FithJC - - 2 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGs = 0 V, ID = 0.25 mA, Ti = 25 "C
Gate threshold voltage, VGS = VDS VGSM 2.1 3 4
ID = 50 PA
Zero gate voltage drain current IDSS pA
1/Ds=501/,1/Gs=01/,Tj=2r'C - 0.1 1
VDS=50V, 1/Gs=0V,Tj=150''C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance fhosion) Q
VGs = 10 V, ID = 22 A - 0.03 0.036
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2 05.99
