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BUZ103S-4
Quad-Channel SIPMOS Power Transistor
BUZ 103S-4Preliminary data
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
Maximum Ratings
BUZ 103S-4Preliminary data
Thermal Characteristics1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70μm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 103S-4Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 103S-4Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 103S-4Preliminary data
Power dissipation tot = ƒ(TC)20406080100120140°C180C
10
20
30
40
50
60
70
80
90
100
110
130 tot
Drain current D = ƒ(TC)
parameter: VGS ‡ 10 V20406080100120140°C180C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5 D
Preliminary dataBUZ 103S-4
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C1234567A9D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.14 DS (on)
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.00.51.01.52.02.53.03.54.0V5.0DS
10
12 D
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS‡2 x ID x RDS(on)max
10
15
20
25
30
35
45 D
