BUZ103AL ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)BUZ 103AL® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Level• dv/d ..
BUZ103S ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.036R Ω• Enhanceme ..
BUZ103S-4 ,Quad-Channel SIPMOS Power TransistorBUZ 103S-4Preliminary data®SIPMOS Power Transistor• Quad-channel• Enhancement mode• Avalanche-rate ..
BUZ103S-E3045A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
BUZ103SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.026R Ω• Enhanceme ..
BUZ104L ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)BUZ 104L® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Level• dv/dt ..
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BUZ103AL
N-Channel SIPMOS Power Transistor
BUZ 103AL
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
Maximum Ratings
BUZ 103AL
Maximum Ratings
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 103AL
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 103AL
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 103AL
Drain current D = ƒ(TC)
parameter: VGS ≥ 5 V20406080100120140°C180C
12
16
20
24
28
36 D
Power dissipation tot = ƒ(TC)20406080100120140°C180C
10
20
30
40
50
60
70
80
90
100
110
130 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10 10
K/W thJC
BUZ 103AL
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.01.02.03.04.0V6.0DS
10
20
30
40
50
60
80 D
Drain-source on-resistance DS (on) = ƒ(Tj)
parameter: ID = 17.5 A, VGS = 5 V
-60-202060100°C180j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.14 DS (on)
Typ. forward transconductance gfs
= f (ID)parameter: tp = 80 μs,
VDS≥2 x ID x RDS(on)max
10
15
20
25
35 fs
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10
15
20
25
30
35
40
45
55 D
